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| NTE2969 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Low Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Low Static Drain-Source On-State Resistance Absolute Maximum Ratings: Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.1A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1429mJ Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300C Thermal Resistance: Maximum Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45C/W Typical Case-to-Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24C/W Maximum Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 4mH, IAS = 25A, VDD = 50V, RG = 27, Starting TJ = +25C. Note 3. ISD 25A, di/dt 320A/s, VDD BVDSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Test Conditions VGS = 0V, ID = 250A Min 400 - 2.0 - - - - - - - - - VDD = 200V, ID = 25A, RG = 5.3, Note 4, Note 5 - - - - VGS = 10V, ID = 25A, VDS = 320V, Note 4, Note 5 - - - Typ - 0.20 - - - - - - 18.91 3180 435 200 22 22 127 38 140 21 64.8 Max - - 4.0 100 -100 10 100 0.2 - 4130 500 240 55 60 260 85 182 - - Unit V V/C V nA nA A A mhos pF pF pF ns ns ns ns nC nC nC Breakdown Voltage Temperature DBV/DTJ ID = 250A Coefficient Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source Leakage Reverse Zero Gate Voltage Drain Current VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr (Body Diode) (Body Diode) Note 1 TJ = +25C, IS = 25A, VGS = 0V, Note 4 TJ = +25C, IF = 25A, dIF/dt = 100A/s VDS = 5V, ID = 250A VGS = 30V VGS = -30V VDS = 400V, VGS = 0 VDS = 320V, TC = +150C Static Drain-Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge VGS = 10V, ID = 12.5A, Note 4 VDS = 50V, ID = 12.5A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time - - - - - - - - 484 7.6 25 100 1.5 - - A A V ns C Reverse Recovery Charge Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 250s, Duty Cycle 2%. Note 5. Essentially independent of operating temperature. .190 (4.82) .615 (15.62) .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47) |
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